IRF7493TR International Rectifier
Виробник: International Rectifier
N-MOSFET HEXFET 80V 7,4A 2.5W 0,015Ω IRF7493 TIRF7493
кількість в упаковці: 50 шт
на замовлення 130 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 50+ | 38.72 грн |
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Технічний опис IRF7493TR International Rectifier
Description: MOSFET N-CH 80V 9.3A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 5.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції IRF7493TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IRF7493TR | Infineon Technologies |
Description: MOSFET N-CH 80V 9.3A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 5.6A, 10V Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| IRF7493TR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 9.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 9.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.