IRF7503TRPBF Infineon Technologies
| Кількість | Ціна |
|---|---|
| 9+ | 36.67 грн |
| 10+ | 35.50 грн |
| 100+ | 22.08 грн |
| 500+ | 18.85 грн |
| 1000+ | 16.74 грн |
| 2000+ | 16.25 грн |
| 4000+ | 14.98 грн |
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Технічний опис IRF7503TRPBF Infineon Technologies
Description: MOSFET 2N-CH 30V 2.4A MICRO8, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.4A, Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V, Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: Micro8™, Part Status: Active.
Інші пропозиції IRF7503TRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRF7503TRPBF | International Rectifier |
 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRF7503TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 2.4A MICRO8 Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: Micro8™ Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
|
|
IRF7503TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 2.4A MICRO8 Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: Micro8™ Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRF7503TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Technology: HEXFET® Type of transistor: N-MOSFET x2 Kind of package: reel Power dissipation: 1.25W Drain current: 2.4A Drain-source voltage: 30V Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| IRF7503TRPBF |
|
Виробник: International Rectifier
Транзистори
Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRF7503TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 2.4A MICRO8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro8™
Part Status: Active
Description: MOSFET 2N-CH 30V 2.4A MICRO8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro8™
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| IRF7503TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 2.4A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro8™
Part Status: Active
Description: MOSFET 2N-CH 30V 2.4A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro8™
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| IRF7503TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET x2
Kind of package: reel
Power dissipation: 1.25W
Drain current: 2.4A
Drain-source voltage: 30V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET x2
Kind of package: reel
Power dissipation: 1.25W
Drain current: 2.4A
Drain-source voltage: 30V
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.