Технічний опис IRF7506TRPBF Infineon Technologies
Description: MOSFET 2P-CH 30V 1.7A MICRO8, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1.7A, Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V, Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: Micro8™, Part Status: Obsolete.
Інші пропозиції IRF7506TRPBF
Фото | Назва | Виробник | Інформація |
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IRF7506TRPBF | Виробник : INFINEON |
Description: INFINEON - IRF7506TRPBF - Dual-MOSFET, p-Kanal, 30 V, 1.7 A, 0.27 ohm, µSOIC, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 1.7 Rds(on)-Messspannung Vgs: 10 MSL: MSL 2 - 1 Jahr Verlustleistung Pd: 1.25 Bauform - Transistor: µSOIC Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: p-Kanal Betriebswiderstand, Rds(on): 0.27 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 1 SVHC: No SVHC (27-Jun-2018) |
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IRF7506TRPBF | Виробник : INFINEON |
Description: INFINEON - IRF7506TRPBF - Dual-MOSFET, p-Kanal, 30 V, 1.7 A, 0.27 ohm, µSOIC, Oberflächenmontage Transistormontage: Oberflächenmontage Rds(on)-Messspannung Vgs: 10 Schwellenspannung Vgs: 1 Wandlerpolarität: p-Kanal Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 1.7 |
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IRF7506TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.7A Power dissipation: 1.25W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRF7506TRPBF | Виробник : Infineon Technologies |
Description: MOSFET 2P-CH 30V 1.7A MICRO8 Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.7A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: Micro8™ Part Status: Obsolete |
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IRF7506TRPBF | Виробник : Infineon / IR | MOSFET MOSFT DUAL PCh -30V 1.7A Micro 8 |
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IRF7506TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.7A Power dissipation: 1.25W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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