Технічний опис IRF7601PBF Infineon / IR
Description: MOSFET N-CH 20V 5.7A MICRO8, Packaging: Tube, Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: Micro8™, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V.
Інші пропозиції IRF7601PBF
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IRF7601PBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH Si 20V 5.7A 8-Pin Micro Tube |
товар відсутній |
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IRF7601PBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 20V 5.7A MICRO8 Packaging: Tube Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: Micro8™ Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V |
товар відсутній |