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Технічний опис IRF7601PBF Infineon / IR
Description: MOSFET N-CH 20V 5.7A MICRO8, Mounting Type: Surface Mount, Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Packaging: Tube, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Part Status: Discontinued at Digi-Key, Supplier Device Package: Micro8™, Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V.
Інші пропозиції IRF7601PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IRF7601PBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 20V 5.7A MICRO8Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tube Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Part Status: Discontinued at Digi-Key Supplier Device Package: Micro8™ Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V |
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