Технічний опис IRF7663 IR
Description: MOSFET P-CH 20V 8.2A MICRO8, Packaging: Tube, Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: Micro8™, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V.
Інші пропозиції IRF7663
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRF7663 | Infineon Technologies |
 Description: MOSFET P-CH 20V 8.2A MICRO8Packaging: Tube Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: Micro8™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 80 шт В кошику од. на суму грн. |
 |
IRF7663 | Infineon / IR |
MOSFETs |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7663 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 8.2A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V
Description: MOSFET P-CH 20V 8.2A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 80 шт
В кошику
од. на суму грн.