Технічний опис IRF7663TRPBF International Rectifier
Description: MOSFET P-CH 20V 8.2A MICRO8, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Obsolete, Supplier Device Package: Micro8™, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V.
Інші пропозиції IRF7663TRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRF7663TRPBF | Infineon Technologies |
 Description: MOSFET P-CH 20V 8.2A MICRO8Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: Micro8™ Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V |
товару немає в наявності |
В кошику од. на суму грн. |
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IRF7663TRPBF | Infineon Technologies |
Description: MOSFET P-CH 20V 8.2A MICRO8 Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: Micro8™ Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V Drain to Source Voltage (Vdss): 20 V |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7663TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 8.2A MICRO8
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
Description: MOSFET P-CH 20V 8.2A MICRO8
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
товару немає в наявності
В кошику
од. на суму грн.
| IRF7663TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 8.2A MICRO8
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET P-CH 20V 8.2A MICRO8
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
товару немає в наявності
В кошику
од. на суму грн.