IRF7665S2TRPBF Infineon / IR

Description: MOSFET N-CH 100V 4.1A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: DIRECTFET SB, Vgs(th) (Max) @ Id: 5V @ 25µA, Power Dissipation (Max): 2.4W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric SB, Packaging: Tape & Reel (TR).