IRF7705TRPBF Infineon Technologies

Description: MOSFET P-CH 30V 8A 8TSSOP, Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).