Технічний опис IRF7707TRPBF IOR
Description: MOSFET P-CH 20V 7A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-TSSOP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 15 V.
Інші пропозиції IRF7707TRPBF
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRF7707TRPBF | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 15 V |
товару немає в наявності |