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IRF7739L2TRPBF

IRF7739L2TRPBF Infineon / IR

irf7739l2pbf-1302912.pdf
Виробник: Infineon / IR
MOSFET 40V 1 N-CH HEXFET 1mOhm 220nC
на замовлення 878 шт:
термін постачання 21-30 дні (днів)
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Технічний опис IRF7739L2TRPBF Infineon / IR

Description: MOSFET N-CH 40V 46A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric L8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V, Power Dissipation (Max): 3.8W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DirectFET™ Isometric L8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V.

Інші пропозиції IRF7739L2TRPBF

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IRF7739L2TRPBF IRF7739L2TRPBF Infineon Technologies IRF7739L2PBF.pdf Description: MOSFET N-CH 40V 46A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF7739L2TRPBF IRF7739L2TRPBF Infineon Technologies IRF7739L2PBF.pdf Description: MOSFET N-CH 40V 46A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DirectFET™ Isometric L8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L8
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
IRF7739L2TRPBF IRF7739L2TRPBF INFINEON TECHNOLOGIES irf7739l2pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IRF7739L2TRPBF IRF7739L2PBF.pdf
IRF7739L2TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 46A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF7739L2TRPBF IRF7739L2PBF.pdf
IRF7739L2TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 46A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DirectFET™ Isometric L8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L8
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
IRF7739L2TRPBF irf7739l2pbf.pdf
IRF7739L2TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.