Технічний опис IRF7750TR IOR
Description: MOSFET 2P-CH 20V 4.7A 8-TSSOP, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1.2V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V, Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 4.7A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції IRF7750TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRF7750TR | Infineon Technologies |
 Description: MOSFET 2P-CH 20V 4.7A 8-TSSOPSupplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1.2V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Current - Continuous Drain (Id) @ 25°C: 4.7A Drain to Source Voltage (Vdss): 20V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
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IRF7750TR | Infineon Technologies |
Description: MOSFET 2P-CH 20V 4.7A 8-TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7750TR |
|
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 4.7A 8-TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 4.7A 8-TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IRF7750TR |
|
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 4.7A 8-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
Description: MOSFET 2P-CH 20V 4.7A 8-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
товару немає в наявності
В кошику
од. на суму грн.