IRF7759L2TRPBF Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 521.34 грн |
| 10+ | 498.49 грн |
| 100+ | 389.06 грн |
| 500+ | 369.33 грн |
| 1000+ | 350.30 грн |
| 2000+ | 346.07 грн |
| 4000+ | 224.13 грн |
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Технічний опис IRF7759L2TRPBF Infineon Technologies
Description: MOSFET N-CH 75V 26A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric L8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V, Power Dissipation (Max): 3.3W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DirectFET™ Isometric L8, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12222 pF @ 25 V.
Інші пропозиції IRF7759L2TRPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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IRF7759L2TRPBF | Infineon Technologies |
 Description: MOSFET N-CH 75V 26A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12222 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRF7759L2TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 26A Case: DirectFET Mounting: SMD Kind of channel: enhancement Gate charge: 200nC On-state resistance: 2.3mΩ Power dissipation: 125W Technology: HEXFET® Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| IRF7759L2TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 26A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12222 pF @ 25 V
Description: MOSFET N-CH 75V 26A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12222 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRF7759L2TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Gate charge: 200nC
On-state resistance: 2.3mΩ
Power dissipation: 125W
Technology: HEXFET®
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Gate charge: 200nC
On-state resistance: 2.3mΩ
Power dissipation: 125W
Technology: HEXFET®
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.