IRF7780MTRPBF Infineon Technologies

Description: MOSFET N-CH 75V 89A DIRECTFET, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 53A, 10V, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric ME, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 6504 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Obsolete, Supplier Device Package: DirectFET™ Isometric ME, Vgs(th) (Max) @ Id: 3.7V @ 150µA.