IRF7805PBF

IRF7805PBF

Код товару: 79757
Виробник: IR
Корпус: SO-8
Uds,V: 30 V
Idd,A: 10 A
Rds(on), Ohm: 11 mOhm
Ciss, pF/Qg, nC: /22
Примітка: -
Монтаж: SMD

irf7805pbf-datasheet.pdf
В наявності/на замовлення

Технічний опис IRF7805PBF

  • MOSFET, N, LOGIC, SO-8
  • Transistor Type:MOSFET
  • Transistor Polarity:N
  • Typ Voltage Vds:30V
  • Cont Current Id:13A
  • On State Resistance:0.011ohm
  • Voltage Vgs Rds on Measurement:4.5V
  • Typ Voltage Vgs th:3V
  • Case Style:SOIC
  • Termination Type:SMD
  • Current Temperature:25`C
  • External Depth:5.2mm
  • External Length / Height:1.75mm
  • External Width:4.05mm
  • Full Power Rating Temperature:25`C
  • Max Voltage Vds:30V
  • No. of Pins:8
  • No. of Transistors:1
  • Power Dissipation:2.5W
  • Power Dissipation Pd:2.5W
  • Pulse Current Idm:100A
  • Row Pitch:6.3mm
  • SMD Marking:IRF7805PBF
  • Transistor Case Style:SOIC

Ціна IRF7805PBF від 0 грн до 0 грн

IRF7805PBF
IRF7805PBF
Виробник: International Rectifier
Description: MOSFET N-CH 30V 13A 8SO
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Infineon-IRF7805PBF-DS-v02_00-EN.pdf?fileId=5546d462533600a401535607ccc41cc0
товар відсутній, Ви можете зробити запит додавши товар у кошик
IRF7805PBF
IRF7805PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Packaging: Tube
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Discontinued at Digi-Key
irf7805pbf.pdf?fileId=5546d462533600a401535607ccc41cc0
товар відсутній, Ви можете зробити запит додавши товар у кошик
IRF7805PBF
Виробник: Infineon Technologies
Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube
irf7805pbf.pdf?fileId=5546d462533600a401535607ccc41cc0 Infineon-IRF7805PBF-DS-v02_00-EN.pdf?fileId=5546d462533600a401535607ccc41cc0
товар відсутній, Ви можете зробити запит додавши товар у кошик
IRF7805PBF
IRF7805PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
irf7805pbf.pdf?fileId=5546d462533600a401535607ccc41cc0
товар відсутній, Ви можете зробити запит додавши товар у кошик
IRF7805PBF
IRF7805PBF
Виробник: Infineon Technologies
MOSFET 30V 1 N-CH HEXFET 11mOhms 22nC
Infineon-IRF7805PBF-DS-v02_00-EN-1226489.pdf
на замовлення 2978 шт
термін постачання 14-28 дні (днів)