Технічний опис IRF7809A IR
Description: MOSFET N-CH 30V 14.5A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 16 V.
Інші пропозиції IRF7809A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IRF7809A | Виробник : IR |
 SO-8 |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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IRF7809A | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 14.5A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 16 V |
товар відсутній |