IRF7815PBF Infineon Technologies

Description: MOSFET N-CH 150V 5.1A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 3.1A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 75 V.