Технічний опис IRF7821PBF International Rectifier
Description: MOSFET N-CH 30V 13.6A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA, Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, Power Dissipation (Max): 2.5W (Ta).
Інші пропозиції IRF7821PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IRF7821PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 13.6A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Power Dissipation (Max): 2.5W (Ta) |
товару немає в наявності |
Мінімальне замовлення: 3800 шт В кошику од. на суму грн. |
|
IRF7821PBF | Infineon Technologies |
MOSFET 30V N-CH HEXFET 9.1mOhms 9.3nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7821PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13.6A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Power Dissipation (Max): 2.5W (Ta)
Description: MOSFET N-CH 30V 13.6A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Power Dissipation (Max): 2.5W (Ta)
товару немає в наявності
Мінімальне замовлення: 3800 шт
В кошику
од. на суму грн.
| IRF7821PBF |
![]() |
Виробник: Infineon Technologies
MOSFET 30V N-CH HEXFET 9.1mOhms 9.3nC
MOSFET 30V N-CH HEXFET 9.1mOhms 9.3nC
товару немає в наявності
В кошику
од. на суму грн.




