IRF7828PBF

IRF7828PBF Infineon Technologies


irf7828pbf.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC N T/R
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Технічний опис IRF7828PBF Infineon Technologies

Description: MOSFET N-CH 30V 13.6A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V.

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IRF7828PBF IRF7828PBF Виробник : Infineon Technologies IRF7828PbF.pdf Description: MOSFET N-CH 30V 13.6A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
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IRF7828PBF IRF7828PBF Виробник : Infineon / IR irf7828pbf-1169490.pdf MOSFET 30V 1 N-CH HEXFET 12.5mOhms 9.3nC
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