IRF7902PBF

IRF7902PBF Infineon Technologies


IRF7902PbF.pdf Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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Технічний опис IRF7902PBF Infineon Technologies

Description: MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A, Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, Rds On (Max) @ Id, Vgs: 22.6mOhm @ 6.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.25V @ 25µA, Supplier Device Package: 8-SO, Part Status: Obsolete.

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IRF7902PBF IRF7902PBF Виробник : Infineon / IR international rectifier_irf7902pbf-1169107.pdf MOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
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