IRF7902PBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 6.4A/9.7A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 6.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W, 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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Технічний опис IRF7902PBF Infineon Technologies
Description: MOSFET 2N-CH 30V 6.4A/9.7A 8SO, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.25V @ 25µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V, Rds On (Max) @ Id, Vgs: 22.6mOhm @ 6.4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.4W, 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.
Інші пропозиції IRF7902PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
IRF7902PBF | Infineon / IR |
MOSFET 30V DUAL N-CH HEXFET 20V VGS MAX |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7902PBF |
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Виробник: Infineon / IR
MOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
MOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
товару немає в наявності
В кошику
од. на суму грн.



