Технічний опис IRF7904PBF IR
Description: MOSFET 2N-CH 30V 7.6A/11A 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A, Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V, Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.25V @ 25µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
Інші пропозиції IRF7904PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRF7904PBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 30V 7.6A/11A 8-Pin SOIC Tube |
товар відсутній |
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IRF7904PBF | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 30V 7.6A/11A 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W, 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.25V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete |
товар відсутній |
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IRF7904PBF | Виробник : Infineon Technologies |
MOSFET 30V DUAL N-CH HEXFET 30V VGS MAX |
товар відсутній |