Технічний опис IRF7904PBF IR
Description: MOSFET 2N-CH 30V 7.6A/11A 8SO, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.25V @ 25µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.4W, 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, Part Status: Obsolete.
Інші пропозиції IRF7904PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRF7904PBF | Infineon Technologies |
 Description: MOSFET 2N-CH 30V 7.6A/11A 8SOSupplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.25V @ 25µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A Drain to Source Voltage (Vdss): 30V Power - Max: 1.4W, 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRF7904PBF | Infineon Technologies |
MOSFET 30V DUAL N-CH HEXFET 30V VGS MAX |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7904PBF |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.6A/11A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W, 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 7.6A/11A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W, 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| IRF7904PBF |
|
Виробник: Infineon Technologies
MOSFET 30V DUAL N-CH HEXFET 30V VGS MAX
MOSFET 30V DUAL N-CH HEXFET 30V VGS MAX
товару немає в наявності
В кошику
од. на суму грн.