| Кількість | Ціна |
|---|---|
| 4+ | 84.70 грн |
| 10+ | 72.95 грн |
| 100+ | 46.38 грн |
| 500+ | 37.43 грн |
| 1000+ | 32.07 грн |
| 2000+ | 30.24 грн |
| 4000+ | 29.32 грн |
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Технічний опис IRF7904TRPBF Infineon Technologies
Description: MOSFET 2N-CH 30V 7.6A/11A 8SO, Part Status: Not For New Designs, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.25V @ 25µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.4W, 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції IRF7904TRPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRF7904TRPBF | Infineon Technologies |
 Description: MOSFET 2N-CH 30V 7.6A/11A 8SOPart Status: Not For New Designs Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.25V @ 25µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A Drain to Source Voltage (Vdss): 30V Power - Max: 1.4W, 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
|
|
IRF7904TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 7.6A/11A 8SO Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A Drain to Source Voltage (Vdss): 30V Power - Max: 1.4W, 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Not For New Designs Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.25V @ 25µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7904TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.6A/11A 8SO
Part Status: Not For New Designs
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W, 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 7.6A/11A 8SO
Part Status: Not For New Designs
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W, 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| IRF7904TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.6A/11A 8SO
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W, 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Description: MOSFET 2N-CH 30V 7.6A/11A 8SO
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W, 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
товару немає в наявності
В кошику
од. на суму грн.