Технічний опис IRF7905PBF International Rectifier
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO, Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.25V @ 25µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V, Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V.
Інші пропозиції IRF7905PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IRF7905PBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SOCurrent - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.25V @ 25µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V |
товару немає в наявності |
В кошику од. на суму грн. |
|
IRF7905PBF | Infineon Technologies |
MOSFETs 30V DUAL N-CH HEXFET 20V VGS MAX |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7905PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
товару немає в наявності
В кошику
од. на суму грн.
| IRF7905PBF |
![]() |
Виробник: Infineon Technologies
MOSFETs 30V DUAL N-CH HEXFET 20V VGS MAX
MOSFETs 30V DUAL N-CH HEXFET 20V VGS MAX
товару немає в наявності
В кошику
од. на суму грн.




