IRF7907PBF Infineon Technologies

Description: MOSFET 2N-CH 30V 9.1A/11A 8SO, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.35V @ 25µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, Rds On (Max) @ Id, Vgs: 16.4mOhm @ 9.1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, Configuration: 2 N-Channel (Dual).