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Технічний опис IRF7910PBF Infineon / IR
Description: MOSFET 2N-CH 12V 10A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 10A, Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V, Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO.
Інші пропозиції IRF7910PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IRF7910PBF | International Rectifier |
 MOSFET 2N-CH 12V 10A 8SOIC Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRF7910PBF | Infineon Technologies |
Description: MOSFET 2N-CH 12V 10A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7910PBF |
|
Виробник: International Rectifier
MOSFET 2N-CH 12V 10A 8SOIC Транзистори
MOSFET 2N-CH 12V 10A 8SOIC Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRF7910PBF |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 12V 10A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET 2N-CH 12V 10A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
товару немає в наявності
В кошику
од. на суму грн.