IRF8113PBF Infineon / IR

Description: MOSFET N-CH 30V 17.2A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.