IRF8113PBF

IRF8113PBF Infineon / IR


irf8113pbf-1227212.pdf Виробник: Infineon / IR
MOSFET 30V 1 N-CH HEXFET 6mOhms 24nC
на замовлення 2874 шт:

термін постачання 21-30 дні (днів)
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Технічний опис IRF8113PBF Infineon / IR

Description: MOSFET N-CH 30V 17.2A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V.

Інші пропозиції IRF8113PBF

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IRF8113PBF Виробник : IOR IRSDS10297-1.pdf?t.download=true&u=5oefqw irf8113pbf.pdf?fileId=5546d462533600a40153560ceb611d50 09+
на замовлення 1663 шт:
термін постачання 14-28 дні (днів)
IRF8113PBF Виробник : International Rectifier IRSDS10297-1.pdf?t.download=true&u=5oefqw Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
товар відсутній
IRF8113PBF IRF8113PBF Виробник : Infineon Technologies irf8113pbf.pdf?fileId=5546d462533600a40153560ceb611d50 Description: MOSFET N-CH 30V 17.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
товар відсутній