Технічний опис IRF8252PBF
- MOSFET, N-CH, 25V, SO8
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:25V
- Cont Current Id:25A
- On State Resistance:2mohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:1.8V
- Case Style:SO-8
- Termination Type:SMD
- Max Voltage Vgs th:2.35V
- Min Voltage Vgs th:1.35V
- Power Dissipation:2.5W
- Pulse Current Idm:200A
- Transistor Case Style:SO
Інші пропозиції IRF8252PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IRF8252PBF | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 25V 25A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 13 V |
товар відсутній |