Технічний опис IRF8252PBF
- MOSFET, N-CH, 25V, SO8
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:25V
- Cont Current Id:25A
- On State Resistance:2mohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:1.8V
- Case Style:SO-8
- Termination Type:SMD
- Max Voltage Vgs th:2.35V
- Min Voltage Vgs th:1.35V
- Power Dissipation:2.5W
- Pulse Current Idm:200A
- Transistor Case Style:SO
Інші пропозиції IRF8252PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRF8252PBF | International Rectifier |
  SO-8 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRF8252PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 25A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF8252PBF |
|
Виробник: International Rectifier
SO-8 Транзистори
SO-8 Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRF8252PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 25A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 13 V
Description: MOSFET N-CH 25V 25A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 13 V
товару немає в наявності
В кошику
од. на суму грн.