Технічний опис IRF8707PBF Vishay/IR
Description: MOSFET N-CH 30V 11A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V.
Інші пропозиції IRF8707PBF
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRF8707PBF Код товару: 39735 |
Виробник : IR |
Транзистори > Польові N-канальні Корпус: SO-8 Uds,V: 30 V Idd,A: 11 A Rds(on), Ohm: 0,01 Ohm Ciss, pF/Qg, nC: 760/6,2 Монтаж: SMD |
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IRF8707PBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 11A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V |
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IRF8707PBF | Виробник : Infineon Technologies | MOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC |
товар відсутній |