IRF8721PBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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Технічний опис IRF8721PBF Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.
Інші пропозиції IRF8721PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IRF8721PBF | Виробник : Infineon Technologies |
MOSFETs 30V 1 N-CH HEXFET 8.5mOhms 8.3nC |
товару немає в наявності |
