IRF8915PBF Infineon / IR

Description: HEXFET POWER MOSFET, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 8.9A, Drain to Source Voltage (Vdss): 20V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.