IRF9333PBF

Виробник: JSMicro
Транзистори > Польові N-канальні
Корпус: SO-8
Uds,V: 30 V
Idd,A: 7,3 A
Rds(on), Ohm: 0,032 Ohm
Ciss, pF/Qg, nC: 1110/14
Монтаж: SMD

Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 9.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 19.4mOhm @ 9.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V

Виробник: Infineon Technologies
MOSFETs 20V FETKY-30V MOSFET 19.4mOhms 14nC