IRF9389PBF Infineon Technologies

Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A, Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V, Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.3V @ 10µA, Supplier Device Package: 8-SO.