Технічний опис IRF9392TRPBF International Rectifier
Description: MOSFET P-CH 30V 9.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), Rds On (Max) @ Id, Vgs: 12.1mOhm @ 7.8A, 20V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 25µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 10V, 20V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V.
Інші пропозиції IRF9392TRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRF9392TRPBF | Виробник : Infineon Technologies |
Description: MOSFET P-CH 30V 9.8A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Rds On (Max) @ Id, Vgs: 12.1mOhm @ 7.8A, 20V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 25µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V |
товару немає в наявності |
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IRF9392TRPBF | Виробник : Infineon / IR |
MOSFET MOSFT PCh -30V -9.8A 17.5mOhm 25Vgs |
товару немає в наявності |


