Технічний опис IRF9630STRRPBF Vishay / BC Components
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -200V, Drain current: -4A, Power dissipation: 74W, Case: D2PAK; TO263, Gate-source voltage: ±20V, On-state resistance: 0.8Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: -26A.
Інші пропозиції IRF9630STRRPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IRF9630STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -4A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -26A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| IRF9630STRRPBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -26A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -26A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.