Технічний опис IRF9956PBF International Rectifier
Description: MOSFET 2N-CH 30V 3.5A 8SO, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, Part Status: Discontinued at Digi-Key, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 3.5A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide).
Інші пропозиції IRF9956PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRF9956PBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 3.5A 8SOOperating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Part Status: Discontinued at Digi-Key Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Current - Continuous Drain (Id) @ 25°C: 3.5A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF9956PBF |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 3.5A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Description: MOSFET 2N-CH 30V 3.5A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
товару немає в наявності
В кошику
од. на суму грн.



