Технічний опис IRF9956PBF International Rectifier
Description: MOSFET 2N-CH 30V 3.5A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.5A, Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key.
Інші пропозиції IRF9956PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IRF9956PBF | Infineon Technologies |
  Description: MOSFET 2N-CH 30V 3.5A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRF9956PBF | INFINEON |
Description: INFINEON - IRF9956PBF - Dual-MOSFET, n-Kanal, 30 V, 3.5 A, 0.1 ohm, SOIC, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 3.5 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 2 Gate-Source-Schwellenspannung, max.: 1 Bauform - Transistor: SOIC Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.1 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 SVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF9956PBF |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 3.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Description: MOSFET 2N-CH 30V 3.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику
од. на суму грн.
| IRF9956PBF |
|
Виробник: INFINEON
Description: INFINEON - IRF9956PBF - Dual-MOSFET, n-Kanal, 30 V, 3.5 A, 0.1 ohm, SOIC, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 3.5
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 2
Gate-Source-Schwellenspannung, max.: 1
Bauform - Transistor: SOIC
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.1
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
SVHC: No SVHC (27-Jun-2018)
Description: INFINEON - IRF9956PBF - Dual-MOSFET, n-Kanal, 30 V, 3.5 A, 0.1 ohm, SOIC, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 3.5
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 2
Gate-Source-Schwellenspannung, max.: 1
Bauform - Transistor: SOIC
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.1
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
SVHC: No SVHC (27-Jun-2018)
товару немає в наявності
В кошику
од. на суму грн.