Технічний опис IRFB41N15DPBF Infineon / IR
Description: MOSFET N-CH 150V 41A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V.
Інші пропозиції IRFB41N15DPBF
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IRFB41N15DPBF | Виробник : Infineon Technologies |
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товару немає в наявності |
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IRFB41N15DPBF | Виробник : INFINEON |
![]() Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 150 Dauer-Drainstrom Id: 41 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 200 Bauform - Transistor: TO-220AB Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.045 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 5.5 SVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
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IRFB41N15DPBF | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V |
товару немає в наявності |