Технічний опис IRFB4212PBF IR
Description: MOSFET N-CH 100V 18A TO220AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 72.5mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3.
Інші пропозиції IRFB4212PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRFB4212PBF | Infineon Technologies |
 Description: MOSFET N-CH 100V 18A TO220ABPackaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 72.5mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRFB4212PBF | Infineon Technologies |
MOSFETs MOSFT 100V 18A 72.5mOhm 15nC Qg |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFB4212PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 18A TO220AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Description: MOSFET N-CH 100V 18A TO220AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
товару немає в наявності
В кошику
од. на суму грн.
| IRFB4212PBF |
|
Виробник: Infineon Technologies
MOSFETs MOSFT 100V 18A 72.5mOhm 15nC Qg
MOSFETs MOSFT 100V 18A 72.5mOhm 15nC Qg
товару немає в наявності
В кошику
од. на суму грн.