Технічний опис IRFB4310ZPBFXKMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Supplier Device Package: TO-220AB, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.037mA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V.
Інші пропозиції IRFB4310ZPBFXKMA1
| Фото | Назва | Виробник | Інформація |
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| IRFB4310ZPBFXKMA1 | Виробник : Infineon Technologies | IRFB4310ZPBFXKMA1 |
товару немає в наявності |
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IRFB4310ZPBFXKMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Supplier Device Package: TO-220AB Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.037mA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V |
товару немає в наявності |
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| IRFB4310ZPBFXKMA1 | Виробник : Infineon Technologies |
 MOSFETs TRENCH >=100V |
товару немає в наявності |
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| IRFB4310ZPBFXKMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 127A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |