| Кількість | Ціна |
|---|---|
| 4+ | 101.02 грн |
| 10+ | 67.85 грн |
| 100+ | 46.78 грн |
| 500+ | 38.89 грн |
| 1000+ | 34.98 грн |
| 2000+ | 34.56 грн |
| 10000+ | 34.49 грн |
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Технічний опис IRFB5615PBFXKMA1 Infineon Technologies
Description: MOSFET N-CH, Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 144W (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції IRFB5615PBFXKMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRFB5615PBFXKMA1 | Infineon Technologies |
 Description: MOSFET N-CHInput Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| IRFB5615PBFXKMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.