IRFB5615PBFXKMA1 Infineon Technologies

Description: MOSFET N-CH, Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 144W (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.