Технічний опис IRFB61N15DPBF
- MOSFET, N, 150V, 60A, TO-220
- Transistor Polarity:N
- Max Voltage Vds:150V
- On State Resistance:0.032ohm
- Power Dissipation:330W
- Transistor Case Style:TO-220AB
- SVHC:No SVHC
- Case Style:TO-220AB
- Cont Current Id:60A
- Junction to Case Thermal Resistance A:0.45`C/W
- On State resistance @ Vgs = 10V:32ohm
- Power Dissipation Pd:330W
- Pulse Current Idm:250A
- Termination Type:Through Hole
- Transistor Type:MOSFET
- Typ Voltage Vds:150V
- Typ Voltage Vgs th:5.5V
- Voltage Vgs Rds on Measurement:10V
Інші пропозиції IRFB61N15DPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRFB61N15DPBF | International Rectifier |
  TO-220AB Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRFB61N15DPBF | Infineon Technologies |
Description: MOSFET N-CH 150V 60A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V Power Dissipation (Max): 2.4W (Ta), 330W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRFB61N15DPBF | Infineon Technologies |
MOSFET 150V 1 N-CH HEXFET 32mOhms 95nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFB61N15DPBF |
|
Виробник: International Rectifier
TO-220AB Транзистори
TO-220AB Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRFB61N15DPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Description: MOSFET N-CH 150V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFB61N15DPBF |
|
Виробник: Infineon Technologies
MOSFET 150V 1 N-CH HEXFET 32mOhms 95nC
MOSFET 150V 1 N-CH HEXFET 32mOhms 95nC
товару немає в наявності
В кошику
од. на суму грн.