IRFBA90N20DPBF

Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 98A SUPER-220
Packaging: Tube
Package / Case: TO-273AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 59A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-220™ (TO-273AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 25 V

Виробник: Infineon / IR
MOSFET MOSFT 200V 98A 23mOhm 160nC