IRFD113 Harris Corporation

Description: MOSFET N-CH 60V 800MA 4DIP, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 4-HVMDIP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: 4-DIP (0.300", 7.62mm), Packaging: Tube.