IRFD9123 Harris Corporation

Description: MOSFET P-CH 100V 1A 4DIP, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Supplier Device Package: 4-HVMDIP, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: 4-DIP (0.300", 7.62mm), Packaging: Tube.