IRFH4251DTRPBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/188A PQFN
Part Status: Last Time Buy
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2.1V @ 35µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 64A, 188A
Drain to Source Voltage (Vdss): 25V
Power - Max: 31W, 63W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Технічний опис IRFH4251DTRPBF Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/188A PQFN, Part Status: Last Time Buy, Supplier Device Package: PG-TISON-8, Vgs(th) (Max) @ Id: 2.1V @ 35µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V, Current - Continuous Drain (Id) @ 25°C: 64A, 188A, Drain to Source Voltage (Vdss): 25V, Power - Max: 31W, 63W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Schottky, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції IRFH4251DTRPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
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IRFH4251DTRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 25V 64A/188A PQFN Part Status: Last Time Buy Supplier Device Package: PG-TISON-8 Vgs(th) (Max) @ Id: 2.1V @ 35µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Current - Continuous Drain (Id) @ 25°C: 64A, 188A Drain to Source Voltage (Vdss): 25V Power - Max: 31W, 63W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual), Schottky Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRFH4251DTRPBF | Infineon / IR |
MOSFET 25V Dual N-Ch 1.10mOhm 44nC 45A |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
 |
IRFH4251DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 45A Power dissipation: 31W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Trade name: FastIRFET |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| IRFH4251DTRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/188A PQFN
Part Status: Last Time Buy
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2.1V @ 35µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 64A, 188A
Drain to Source Voltage (Vdss): 25V
Power - Max: 31W, 63W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 25V 64A/188A PQFN
Part Status: Last Time Buy
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2.1V @ 35µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 64A, 188A
Drain to Source Voltage (Vdss): 25V
Power - Max: 31W, 63W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IRFH4251DTRPBF |
|
Виробник: Infineon / IR
MOSFET 25V Dual N-Ch 1.10mOhm 44nC 45A
MOSFET 25V Dual N-Ch 1.10mOhm 44nC 45A
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| IRFH4251DTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 31W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 31W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.