IRFH5006TR2PBF

IRFH5006TR2PBF Infineon Technologies


irfh5006pbf.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 60V 21A 8-Pin PQFN EP T/R
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Технічний опис IRFH5006TR2PBF Infineon Technologies

Description: MOSFET N-CH 60V 100A 5X6 PQFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V, Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Obsolete, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 30 V.

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IRFH5006TR2PBF IRFH5006TR2PBF Виробник : Infineon Technologies irfh5006pbf.pdf?fileId=5546d462533600a40153561aa6561e96 Description: MOSFET N-CH 60V 100A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 30 V
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IRFH5006TR2PBF IRFH5006TR2PBF Виробник : Infineon / IR irfh5006pbf-1169407.pdf MOSFET MOSFT 60V 100A 4.1mOhm 67nC Qg
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