IRFH5007TRPBF Infineon Technologies
| Кількість | Ціна |
|---|---|
| 259+ | 136.72 грн |
| 500+ | 122.58 грн |
| 1000+ | 113.48 грн |
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Технічний опис IRFH5007TRPBF Infineon Technologies
Description: MOSFET N-CH 75V 17A/100A 8PQFN, Vgs(th) (Max) @ Id: 4V @ 150µA, Power Dissipation (Max): 3.6W (Ta), 156W (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-PQFN (5x6).
Інші пропозиції IRFH5007TRPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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IRFH5007TRPBF | Infineon Technologies |
 Description: MOSFET N-CH 75V 17A/100A 8PQFNVgs(th) (Max) @ Id: 4V @ 150µA Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-PQFN (5x6) |
товару немає в наявності |
В кошику од. на суму грн. |
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IRFH5007TRPBF | Infineon Technologies |
Description: MOSFET N-CH 75V 17A/100A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 150µA Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRFH5007TRPBF | Infineon Technologies |
MOSFET 75V 1 N-CH HEXFET 5.9mOhms 65nC |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. |
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IRFH5007TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 250W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 17A Power dissipation: 250W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| IRFH5007TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 17A/100A 8PQFN
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Description: MOSFET N-CH 75V 17A/100A 8PQFN
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
товару немає в наявності
В кошику
од. на суму грн.
| IRFH5007TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 17A/100A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 75V 17A/100A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IRFH5007TRPBF |
|
Виробник: Infineon Technologies
MOSFET 75V 1 N-CH HEXFET 5.9mOhms 65nC
MOSFET 75V 1 N-CH HEXFET 5.9mOhms 65nC
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| IRFH5007TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.