IRFH5110TRPBF Infineon Technologies

Description: MOSFET N-CH 100V 11A/63A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc), Rds On (Max) @ Id, Vgs: 12.4mOhm @ 37A, 10V, Power Dissipation (Max): 3.6W (Ta), 114W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3152 pF @ 25 V.