IRFH5215TRPBF Infineon Technologies

Description: MOSFET N-CH 150V 5A/27A PQFN, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Last Time Buy, Supplier Device Package: PQFN (5x6), Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 3.6W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-VQFN Exposed Pad, Packaging: Tape & Reel (TR).