IRFH5220TRPBF Infineon Technologies

Description: MOSFET N-CH 200V 3.8A/20A PQFN, Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PQFN (5x6), Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc), Rds On (Max) @ Id, Vgs: 99.9mOhm @ 5.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-VQFN Exposed Pad, Packaging: Tape & Reel (TR).