Технічний опис IRFH5255TRPBF Infineon / IR
Description: MOSFET N-CH 25V 15A/51A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V, Power Dissipation (Max): 3.6W (Ta), 26W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 13 V.
Інші пропозиції IRFH5255TRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRFH5255TRPBF | Виробник : International Rectifier |
 Trans MOSFET N-CH 25V 15A 8-Pin PQFN T/R |
товару немає в наявності |
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IRFH5255TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 25V 15A/51A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Power Dissipation (Max): 3.6W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 13 V |
товару немає в наявності |