Технічний опис IRFH5304TR2PBF Infineon Technologies
Description: MOSFET N-CH 30V 22A 8VQFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V, Vgs(th) (Max) @ Id: 2.35V @ 50µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Obsolete, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V.
Інші пропозиції IRFH5304TR2PBF
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IRFH5304TR2PBF | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 30V 22A 8VQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V |
товару немає в наявності |